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SI DIFFUSION IN AL DURING IMPLANTATION AS PROBED BY (P,GAMMA) RESONANCE BROADENING
被引:3
作者
:
ANTTILA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HELSINKI,DEPT PHYS,HELSINKI,FINLAND
UNIV HELSINKI,DEPT PHYS,HELSINKI,FINLAND
ANTTILA, A
[
1
]
HIRVONEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HELSINKI,DEPT PHYS,HELSINKI,FINLAND
UNIV HELSINKI,DEPT PHYS,HELSINKI,FINLAND
HIRVONEN, J
[
1
]
机构
:
[1]
UNIV HELSINKI,DEPT PHYS,HELSINKI,FINLAND
来源
:
THIN SOLID FILMS
|
1976年
/ 33卷
/ 02期
关键词
:
D O I
:
10.1016/0040-6090(76)90089-4
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:L13 / L14
页数:2
相关论文
共 3 条
[1]
ENERGY-LEVELS OF A = 21-44 NUCLEI .5.
ENDT, PM
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
ENDT, PM
VANDERLE.C
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
VANDERLE.C
[J].
NUCLEAR PHYSICS A,
1973,
A214
(OCT29)
: 1
-
625
[2]
RADIATION-ENHANCED DIFFUSION OF BORON IN GERMANIUM DURING ION-IMPLANTATION
GUSEVA, MI
论文数:
0
引用数:
0
h-index:
0
机构:
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
GUSEVA, MI
MANSUROVA, AN
论文数:
0
引用数:
0
h-index:
0
机构:
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
MANSUROVA, AN
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1973,
20
(03):
: 207
-
210
[3]
DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS
MCCALDIN, JO
论文数:
0
引用数:
0
h-index:
0
MCCALDIN, JO
SANKUR, H
论文数:
0
引用数:
0
h-index:
0
SANKUR, H
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(12)
: 524
-
&
←
1
→
共 3 条
[1]
ENERGY-LEVELS OF A = 21-44 NUCLEI .5.
ENDT, PM
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
ENDT, PM
VANDERLE.C
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
RIJKSUNIV UTRECHT, FYS LAB, SORBONNELAAN 4, UTRECHT, NETH.
VANDERLE.C
[J].
NUCLEAR PHYSICS A,
1973,
A214
(OCT29)
: 1
-
625
[2]
RADIATION-ENHANCED DIFFUSION OF BORON IN GERMANIUM DURING ION-IMPLANTATION
GUSEVA, MI
论文数:
0
引用数:
0
h-index:
0
机构:
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
GUSEVA, MI
MANSUROVA, AN
论文数:
0
引用数:
0
h-index:
0
机构:
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
KURCHATOV ATOM ENERGY INST, KURCHATOV SQ, MOSCOW, USSR
MANSUROVA, AN
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1973,
20
(03):
: 207
-
210
[3]
DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS
MCCALDIN, JO
论文数:
0
引用数:
0
h-index:
0
MCCALDIN, JO
SANKUR, H
论文数:
0
引用数:
0
h-index:
0
SANKUR, H
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(12)
: 524
-
&
←
1
→