CHEMICAL AND ELECTRICAL CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS TREATED BY ELECTRON-CYCLOTRON RESONANCE PLASMAS

被引：8

作者：

LI, PW

WANG, Q

YANG, ES

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期

关键词：

D O I：

10.1063/1.107122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.

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页码：1996 / 1998

页数：3

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