OXYGEN-VACANCY-DERIVED DEFECT ELECTRONIC STATES ON THE SNO2(110) SURFACE

被引：9

作者：

COX, DF ^{[1
]}

FRYBERGER, TB ^{[1
]}

SEMANCIK, S ^{[1
]}

机构：

[1] NBS,DIV CHEM PROC METROL,GAITHERSBURG,MD 20899

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575075

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：828 / 829

页数：2

共 11 条

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[3]

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[6]

DEFRESART E, 1980, SOLID STATE COMMUN, V37, P13

[7] OXYGEN DEFICIENT SNO2(110) AND TIO2(110) - A COMPARATIVE-STUDY BY PHOTOEMISSION [J].

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[8] ORIGIN OF DEFECT STATES ON THE SURFACE OF TIO2 [J].

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SCHMEITS, M .

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[9] ELECTRONIC-STRUCTURE OF POINT-DEFECTS ON OXIDE SURFACES [J].

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[10] DEFECT STRUCTURE AND ELECTRONIC DONOR LEVELS IN STANNIC OXIDE CRYSTALS [J].

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