FEMTOSECOND STUDIES OF INTERVALLEY SCATTERING IN GAAS AND ALXGA1-XAS

被引：5

作者：

BAILEY, DW

STANTON, CJ

HESS, K

LAGASSE, MJ

SCHOENLEIN, RW

FUJIMOTO, JG

机构：

[1] UNIV FLORIDA,DEPT PHYS,GAINESVILLE,FL 32601

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90262-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1491 / 1495

页数：5

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[7] FEMTOSECOND DYNAMICS OF HIGHLY EXCITED CARRIERS IN ALXGA1-XAS [J].

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