ANALYTICAL AND EXPERIMENTAL STUDIES OF THERMAL NOISE IN MOSFETS

An analysis of the channel thermal noise in MOSFET's, based on the one-dimensional charge sheet model, is presented. The analytical expression is valid in the strong, moderate, and weak inversion regions. The body effect on the device parameters relevant to the thermal noise is discussed. A measurement technique as well as experimental results of P- and N-MOSFET's of a 1.2 mum radiation hard CMOS process are presented. The calculated channel thermal noise coefficient gamma as in i(d)2/DELTAf = 4kT gamma g(do) agrees well with experimental data for effective device channel length as short as 1.7 mum.