EFFECT OF ZN DOPING ON CHARGE-TRANSPORT IN YBA2CU3O7+GAMMA

被引：89

作者：

MIZUHASHI, K

TAKENAKA, K

FUKUZUMI, Y

UCHIDA, S

机构：

[1] Department of Superconductivity, University of Tokyo, Bunkyo-ku

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.52.R3884

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistivity and the in-plane Hall coefficient are investigated on Zn-doped YBa2Cu3O7-y single crystals with emphasis on the underdoped spin-gap phase (y similar to 0.37) where a correlation between charge transport and spin dynamics is clearly seen. The doped Zn acts as a strong potential scatterer on one hand, and induces a local spin magnetic moment on the other even when the charge carriers are not localized. It is found that the characteristic temperature in these transport coefficients, which indicates that a spin gap starts to open, do not change with Zn doping in contrast to a radical depression of the superconducting transition temperature.

引用

页码：R3884 / R3887

页数：4

共 29 条

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