共 4 条
- [1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783
- [2] LEAKAGE CURRENT IN SEMICONDUCTOR JUNCTION RADIATION DETECTORS AND ITS INFLUENCE ON ENERGY-RESOLUTION CHARACTERISTICS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 249 - 262
- [3] TERMAN LM, 1961, 16551 STANF EL LAB T
- [4] 1963, J APPL PHYS, V34, P1570