INTRACELL CHARGE-TRANSFER STRUCTURES FOR SIGNAL-PROCESSING

被引：16

作者：

TIEMANN, JJ ^{[1
]}

ENGELER, WE ^{[1
]}

BAERTSCH, RD ^{[1
]}

BROWN, DM ^{[1
]}

机构：

[1] GE,CORPORATE RES & DEV,POB 8,SCHENECTADY,NY 12301

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 05期

关键词：

D O I：

10.1109/T-ED.1974.17915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：300 / 308

页数：9

共 21 条

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BARBE, DF .

ELECTRONICS LETTERS, 1972, 8 (08) :207-&

[2]

BROWN DM, 1971, IEEE T ELECTRON DEVI, VED18, P931

[3]

BRUGLER JS, 1969, IEEE T ELECTRON DEVI, VED16, P297

[4]

BUSS DD, 1973, IEEE J SOLID STATE C, VSC 8, P138

[5]

CARNES JE, 1972, RCA REV, V33, P327

[6]

CARNES JE, 1972, DEC INT EL DEV M WAS

[7] CHARGE-COUPLED-DEVICE ANALOG MATCHED FILTERS [J].

COLLINS, DR ;

BUSS, DD ;

BAILEY, WH ;

GOSNEY, WM .

ELECTRONICS LETTERS, 1972, 8 (13) :328-&

[8] SURFACE-CHARGE TRANSPORT IN A MULTIELEMENT CHARGE-TRANSFER STRUCTURE [J].

ENGELER, WE ;

TIEMANN, JJ ;

BAERTSCH, RD .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2277-&

[9] SURFACE CHARGE TRANSPORT IN SILICON [J].

ENGELER, WE ;

TIEMANN, JJ ;

BAERTSCH, RD .

APPLIED PHYSICS LETTERS, 1970, 17 (11) :469-&

[10]

ENGELER WE, 1971, IEEE T ELECTRON DEVI, VED18, P1125

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