SURFACE CHARGE TRANSPORT IN SILICON

被引：47

作者：

ENGELER, WE

TIEMANN, JJ

BAERTSCH, RD

机构：

来源：

关键词：

D O I：

10.1063/1.1653272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：469 / &

共 13 条

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