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CLOSED BOAT - NEW APPROACH FOR SEMICONDUCTOR BATCH PROCESSING
被引:11
作者
:
HEARN, EW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
HEARN, EW
[
1
]
TEKAAT, EH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
TEKAAT, EH
[
1
]
SCHWUTTKE, GH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
SCHWUTTKE, GH
[
1
]
机构
:
[1]
IBM CORP E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533
来源
:
MICROELECTRONICS AND RELIABILITY
|
1976年
/ 15卷
/ 01期
关键词
:
D O I
:
10.1016/0026-2714(76)90144-X
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:61 / 66
页数:6
相关论文
共 11 条
[1]
INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(11)
: 1229
-
+
[2]
HEARN EW, 1973, Patent No. 3737282
[3]
TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction
HU, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4413
-
+
[4]
THERMAL EXPANSION OF SILICON
MAISSEL, L
论文数:
0
引用数:
0
h-index:
0
MAISSEL, L
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(01)
: 211
-
211
[5]
MORIZANE K, 1969, J APPL PHYS, V40
[6]
MACROSCOPIC PLASTIC PROPERTIES OF DISLOCATION-FREE GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS .1. YIELD BEHAVIOR
PATEL, JR
论文数:
0
引用数:
0
h-index:
0
PATEL, JR
CHAUDHURI, AR
论文数:
0
引用数:
0
h-index:
0
CHAUDHURI, AR
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(09)
: 2788
-
&
[7]
NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2712
-
&
[8]
SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
MICROELECTRONICS RELIABILITY,
1970,
9
(05)
: 397
-
&
[9]
SCHWUTTKE GH, 1969, 1969 P IEEEA S REL P, P274
[10]
SPARROW EM, 1956, THESIS HARVARD U
←
1
2
→
共 11 条
[1]
INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(11)
: 1229
-
+
[2]
HEARN EW, 1973, Patent No. 3737282
[3]
TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction
HU, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4413
-
+
[4]
THERMAL EXPANSION OF SILICON
MAISSEL, L
论文数:
0
引用数:
0
h-index:
0
MAISSEL, L
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(01)
: 211
-
211
[5]
MORIZANE K, 1969, J APPL PHYS, V40
[6]
MACROSCOPIC PLASTIC PROPERTIES OF DISLOCATION-FREE GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS .1. YIELD BEHAVIOR
PATEL, JR
论文数:
0
引用数:
0
h-index:
0
PATEL, JR
CHAUDHURI, AR
论文数:
0
引用数:
0
h-index:
0
CHAUDHURI, AR
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(09)
: 2788
-
&
[7]
NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(09)
: 2712
-
&
[8]
SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
[J].
MICROELECTRONICS RELIABILITY,
1970,
9
(05)
: 397
-
&
[9]
SCHWUTTKE GH, 1969, 1969 P IEEEA S REL P, P274
[10]
SPARROW EM, 1956, THESIS HARVARD U
←
1
2
→