MEV SI IMPLANTATION IN GAAS

被引:22
作者
THOMPSON, PE [1 ]
DIETRICH, HB [1 ]
INGRAM, DC [1 ]
机构
[1] UNIVERSAL ENERGY SYST,DAYTON,OH 45432
关键词
D O I
10.1016/0168-583X(85)90647-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:287 / 291
页数:5
相关论文
共 6 条
[1]   AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE [J].
AMBRIDGE, T ;
FAKTOR, MM .
JOURNAL OF APPLIED ELECTROCHEMISTRY, 1975, 5 (04) :319-328
[2]   APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].
AMBRIDGE, T ;
STEVENSON, JL ;
REDSTALL, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228
[3]  
AMBRIDGE T, 1975, I PHYS C SER, V24, P320
[4]   SPECIFIC SITE LOCATION OF S AND SI IN ION-IMPLANTED GAAS [J].
BHATTACHARYA, RS ;
PRONKO, PP ;
LING, SC .
APPLIED PHYSICS LETTERS, 1983, 42 (10) :880-882
[5]  
LIU SG, 1980, RCA REV, V41, P227
[6]   LOCALIZED VIBRATIONAL MODE ABSORPTION OF ION-IMPLANTED SILICON IN GAAS [J].
SKOLNIK, LH ;
SPITZER, WG ;
EULER, F ;
HUNSPERG.RG ;
KAHAN, A .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2146-&