USE OF NEURAL NETWORKS IN MODELING SEMICONDUCTOR MANUFACTURING PROCESSES - AN EXAMPLE FOR PLASMA ETCH MODELING

被引:46
作者
RIETMAN, EA [1 ]
LORY, ER [1 ]
机构
[1] AT&T BELL LABS,ENGN RES CTR,PRINCETON,NJ
关键词
D O I
10.1109/66.267644
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:343 / 347
页数:5
相关论文
共 19 条
[1]  
CHAMBERS JM, 1992, STATISTICAL MODELING
[2]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[3]   THE REACTIVE ION ETCHING OF TANTALUM SILICIDE POLYSILICON BILAYERS IN SILICON TETRACHLORIDE AND HYDROGEN-CHLORIDE [J].
CURTIS, BJ ;
BRUNNER, HR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (05) :1463-1468
[4]  
DAUTREMONTSMITH WC, 1988, SEMICONDUCTOR MATERI, P191
[5]  
Deif A., 1983, SENSITIVITY ANAL LIN
[6]  
FRESONKE D, 1989, MAY P INT SEM MAN SC, P108
[7]   ON THE RELATIONS BETWEEN DISCRIMINANT-ANALYSIS AND MULTILAYER PERCEPTRONS [J].
GALLINARI, P ;
THIRIA, S ;
BADRAN, F ;
FOGELMANSOULIE, F .
NEURAL NETWORKS, 1991, 4 (03) :349-360
[8]  
HIMMEL CD, 1992, 1992 P INT SEM MAN S
[9]  
JENKINS MW, 1986, SOLID STATE TECHNOL, P175
[10]  
KLIMASAUSKAS CC, 1991, DR DOBBS J APR, P16