THE REACTIVE ION ETCHING OF TANTALUM SILICIDE POLYSILICON BILAYERS IN SILICON TETRACHLORIDE AND HYDROGEN-CHLORIDE

被引：4

作者：

CURTIS, BJ

BRUNNER, HR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 05期

关键词：

D O I：

10.1149/1.2096942

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1463 / 1468

页数：6

共 17 条

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[8] A THROTTLE VALVE FOR AUTOMATIC PRESSURE CONTROL IN SPUTTERING AND REACTIVE SPUTTER ETCHING [J].

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