VACANCY-ZN COMPLEXES IN INP STUDIED BY POSITRONS

被引：57

作者：

DLUBEK, G ^{[1
]}

BRUMMER, O ^{[1
]}

PLAZAOLA, F ^{[1
]}

HAUTOJARVI, P ^{[1
]}

NAUKKARINEN, K ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO 15,FINLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.95734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1136 / 1138

页数：3

共 16 条

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[7]

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[10] AN EXAMINATION OF DEFECTS IN INP SINGLE-CRYSTALS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE USING SYNCHROTRON X-RAY TOPOGRAPHY [J].

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