PHOTO-PROCESSING OF SILICON-NITRIDE

被引：12

作者：

RATHI, VK

GUPTA, M

THANGARAJ, R

CHARI, KS

AGNIHOTRI, OP

机构：

[1] GNDU,DEPT APPL PHYS,AMRITSAR,PUNJAB,INDIA

[2] DEPT ELECTR,NEW DELHI,INDIA

来源：

THIN SOLID FILMS | 1995年 / 266卷 / 02期

关键词：

PHOTO-PROCESSING; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1016/0040-6090(95)06736-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nitride films were synthesized using the new process of photochemical vapour deposition (photo-CVD). Films of different compositions were prepared by mercury-sensitized photo-CVD using 2% silane and ammonia as reactant gases. Material properties of interest to device technology have been evaluated. Dependence of the properties of the films on the Si/N ratio and the amount of hydrogen present in the films is studied, and optimum growth conditions of deposition are identified. Studies of metal-insulators-semiconductor structures with the optimized photo nitride as an active dielectric showed fixed charge similar to 1.2X10(11) cm(-2), mobile charge 3X10(10) cm(-2) and midgap interface state density similar to 1.7X10(11) eV(-1) cm(-1) indicating their potential for use in metal-organic-semiconductor technology. A limited comparison of data with direct photo-CVD is also given.

引用

页码：219 / 223

页数：5

共 18 条

[1]

Aitken J. M., 1981, IEDM, V81, P50

[2] MODELING OF SILICON-NITRIDE DEPOSITION BY 254 NM HG-PHOTOSENSITIZATION AND 185 NM PHOTOLYSIS OF SIH4/NH3 GAS-MIXTURE [J].