STRUCTURAL AND ELECTRICAL-PROPERTIES OF PHOTO-CVD SILICON-NITRIDE FILM

[1] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633

[2] FUJITA S, 1983, ELECTROCHEMICAL SOC, P193

[3] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 232 - &

[4] ITO H, 1982, P S DRY PROC I EL EN, P100

[5] ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1082 - 1099

[6] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477

[7] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6852 - 6856

[8] MAEDA M, 1981, P S DRY PROCESS TOKY, P135

[9] INFLUENCE OF PREPARATION CONDITIONS ON THE HYDROGEN CONTENT OF AMORPHOUS GLOW-DISCHARGE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 173 - 174

[10] NUMASAWA Y, 1983, ELECTROCHEMICAL SOC, P662

[1] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633

[2] FUJITA S, 1983, ELECTROCHEMICAL SOC, P193

[3] RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 232 - &

[4] ITO H, 1982, P S DRY PROC I EL EN, P100

[5] ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1082 - 1099

[6] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477

[7] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6852 - 6856

[8] MAEDA M, 1981, P S DRY PROCESS TOKY, P135

[9] INFLUENCE OF PREPARATION CONDITIONS ON THE HYDROGEN CONTENT OF AMORPHOUS GLOW-DISCHARGE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 173 - 174

[10] NUMASAWA Y, 1983, ELECTROCHEMICAL SOC, P662