NUMERICAL-STUDIES OF ONE-ELECTRON HYDROGENIC IMPURITY STATES IN DOPED SEMICONDUCTORS - UNCOMPENSATED SYSTEMS

被引:24
作者
CHING, WY [1 ]
HUBER, DL [1 ]
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 10期
关键词
D O I
10.1103/PhysRevB.26.5596
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5596 / 5603
页数:8
相关论文
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