HOT-ELECTRON DIFFUSION IN CDTE

被引：8

作者：

CANALI, C ^{[1
]}

CATELLANI, F ^{[1
]}

JACOBONI, C ^{[1
]}

MINDER, R ^{[1
]}

OTTAVIANI, G ^{[1
]}

ALBERIGIQUARANTA, A ^{[1
]}

机构：

[1] UNIV MODENA,IST FIS,MODENA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 17卷 / 11期

关键词：

D O I：

10.1016/0038-1098(75)90622-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1443 / 1445

页数：3

共 8 条

[1]

ALBERIGI.A, 1973, APPL PHYS LETT, V22, P103, DOI 10.1063/1.1654567

[2] MONTE-CARLO CALCULATIONS ON ELECTRON-TRANSPORT IN CDTE1) [J].

BORSARI, V ;

JACOBONI, C .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 54 (02) :649-663

[3] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].

CANALI, C ;

OTTAVIANI, G ;

ALBERIGI.A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+

[4] TRANSPORT PROPERTIES OF CDTE [J].

CANALI, C ;

MARTINI, M ;

OTTAVIANI, G ;

ZANIO, KR .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :422-+

[5] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

FAWCETT, W ;

REES, HD .

PHYSICS LETTERS A, 1969, A 29 (10) :578-&

[6] HIGH-FIELD TRANSPORT PROPERTIES OF CDTE [J].

RUCH, JG .

APPLIED PHYSICS LETTERS, 1972, 20 (07) :253-&

[7] TRANSPORT PROPERTIES OF GAAS [J].

RUCH, JG ;

KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[8] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].

SIGMON, TW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :320-&

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