BAND BENDING AND INTERFACE STATES FOR METALS ON GAAS

[1] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801

[2] NEAR-IDEAL SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1379 - 1381

[3] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1458 - 1460

[4] OBSERVATION OF EXTRINSIC SURFACE STATES ON (1120) CDS [J]. SURFACE SCIENCE, 1975, 51 (01) : 45 - 60

[5] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (02) : 141 - 144

[6] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249

[7] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177

[8] DUKE CB, 1986, PHYS REV B, V33, P1118

[9] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[10] CHARACTERIZATION OF STOICHIOMETRY IN GAAS BY X-RAY-INTENSITY MEASUREMENTS OF QUASI-FORBIDDEN REFLECTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L287 - L289

[1] SURFACE PHASES OF GAAS(100) AND ALAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801

[2] NEAR-IDEAL SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1379 - 1381

[3] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1458 - 1460

[4] OBSERVATION OF EXTRINSIC SURFACE STATES ON (1120) CDS [J]. SURFACE SCIENCE, 1975, 51 (01) : 45 - 60

[5] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (02) : 141 - 144

[6] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249

[7] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1170 - 1177

[8] DUKE CB, 1986, PHYS REV B, V33, P1118

[9] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[10] CHARACTERIZATION OF STOICHIOMETRY IN GAAS BY X-RAY-INTENSITY MEASUREMENTS OF QUASI-FORBIDDEN REFLECTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L287 - L289