ORIENTATION DEPENDENT SURFACE DIPOLE AND FERMI-LEVEL POSITION ON A CLEAN GE CYLINDER

被引：13

作者：

KUHR, HJ

RANKE, W

机构：

[1] Max-Planck-Gesellschaft, Berlin, West Ger, Max-Planck-Gesellschaft, Berlin, West Ger

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 05期

关键词：

RELAXATION PROCESSES - SEMICONDUCTING GALLIUM ARSENIDE - Ionization - SEMICONDUCTING SILICON - Ionization - SPECTROSCOPY; ELECTRON - Applications - TUNGSTEN AND ALLOYS - Ionization;

D O I：

10.1016/0038-1098(87)90298-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoelectron spectroscopy was used to measure the orientation-dependent photoionization threshold xi ( alpha ) and Fermi-level pinning position (E//v minus E//F) at the surface. A cylindrically shaped Ge sample was prepared to allow in situ investigations. The comparison between Ge, Si, GaAs and W data confirms that relaxation-induced dipoles determine xi ( alpha ) on nonpolar semiconductors. The variation of the pinning position shows distinct features.

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页码：285 / 287

页数：3

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