HYBRIDIZATION GAP INSULATING BEHAVIOR OF CE3BI4PT3

被引：72

作者：

SANCHEZCASTRO, C ^{[1
]}

BEDELL, KS ^{[1
]}

COOPER, BR ^{[1
]}

机构：

[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.47.6879

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have calculated the temperature dependence of various thermodynamic and transport properties for the N=2 single-band insulating phase of the Anderson lattice Hamiltonian using a slave-boson approach. The conduction band was assumed to be parabolic with a spherical Brillouin-zone boundary. The transport properties were calculated assuming an impurity scattering mechanism and using a relaxation-time approximation. Our calculations demonstrate how many-body effects (on-site Coulomb repulsion) cause an otherwise wide-gap material to behave as a very-narrow-gap material with temperature dependence in qualitative agreement with the experimental data for Ce3Bi4Pt3. This calculation supports the view that this material is an indirect-gap semiconductor.

引用

页码：6879 / 6884

页数：6

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