DISORDER PRODUCTION IN ION-IMPLANTED SILICON

被引：4

作者：

KERKOW, H

LUKASCH, B

PIPPIG, R

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 02期

关键词：

D O I：

10.1002/pssa.2210700216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：489 / 495

页数：7

共 15 条

[1]

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CHRISTODOULIDES, CE ;

KADHIM, NJ ;

CARTER, G .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4) :225-234

[3] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[4] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

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PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[5]

KERKOW H, UNPUB

[6] CORRECTION OF THE LIMITED ENERGY RESOLUTION IN RBS SPECTRA [J].

LUKASCH, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (02) :533-538

[7]

MAASS K, UNPUB EXPT TECH PHYS

[8] PLURAL AND MULTIPLE SCATTERING OF LOW-ENERGY HEAVY PARTICLES IN SOLIDS [J].

MEYER, L .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 44 (01) :253-&

[9]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[10]

RIMINI E, 1976, MATERIAL CHARACTERIZ, P461

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