LPE GROWTH AND CHARACTERIZATION OF CADMIUM AND BERYLLIUM DOPED INP AND IN.7GA.3AS.6P.4

被引：3

作者：

PERRONNET, A

MAGNABAL, J

SIGOGNE, D

HUET, D

BENOIT, J

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982510

中图分类号：

学科分类号：

摘要：

引用

页码：73 / 83

页数：11

共 12 条

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[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
[3] EPITAXIAL-GROWTH OF CD-DOPED INP FROM THE VAPOR
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LINH, NT
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3247 - 3251
[4] FUJITA S, 1981, JPN J APPL PHYS, V20, pL889, DOI 10.1143/JJAP.20.L889
[5] LIQUID-PHASE EPITAXY OF INP
HESS, K
STATH, N
BENZ, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
[6] Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10
[7] KUPHAL E, 1980, P INP NATO WORKSHOP, P443
[8] RENVOISE M, 1977, THESIS PARIS 6
[9] LIQUID-PHASE EPITAXIAL-GROWTH OF CADMIUM-DOPED IN GAASP-INP DOUBLE HETEROSTRUCTURE LASERS
TAMARI, N
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 792 - 794
[10] LPE GROWTH OF CD-DOPED INP
UMEBU, I
ROBSON, PN
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) : 292 - 296