TRANSMISSION ELECTRON MICROSCOPY OF SYNTHETIC DIAMOND

被引:7
作者
PHAAL, C
ZUIDEMA, G
机构
来源
PHILOSOPHICAL MAGAZINE | 1966年 / 14卷 / 127期
关键词
D O I
10.1080/14786436608218990
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:79 / &
相关论文
共 12 条
[1]  
AMELINCKX S, 1964, SOLID STATE PHYSI S6
[2]  
BERMAN R, 1965, PHYSICAL PROPERTI ED
[3]  
BOVENKERK HP, 1960, P C HIGH PRESSURE
[4]  
Cabrera N, 1958, GROWTH PERFECTION CR
[5]   IMPERFECTIONS IN TYPE I AND TYPE II DIAMONDS [J].
EVANS, T ;
PHAAL, C .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 270 (1343) :538-&
[6]   STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].
FINCH, RH ;
QUEISSER, HJ ;
WASHBURN, J ;
THOMAS, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&
[7]   ELECTRON MICROSCOPE TRANSMISSION IMAGES OF COHERENT DOMAIN BOUNDARIES .1. DYNAMICAL THEORY [J].
GEVERS, R ;
DELAVIGNETTE, P ;
BLANK, H ;
AMELINCKX, S .
PHYSICA STATUS SOLIDI, 1964, 4 (02) :383-410
[8]   AN X-RAY TOPOGRAPHIC STUDY OF PLANAR GROWTH DEFECTS IN A NATURAL DIAMOND [J].
LAWN, B ;
KAMIYA, Y ;
LANG, AR .
PHILOSOPHICAL MAGAZINE, 1965, 12 (115) :177-+
[9]  
LONSDALE K, 1965, PHYSICAL PROPERTIES
[10]  
PHAAL C, 1962, THESIS U READING