INFLUENCE OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL QUALITY OF LATTICE MATCHED GAAS/SCYBAS/GAAS STRUCTURES

被引：4

作者：

GUENAIS, B ^{[1
]}

POUDOULEC, A ^{[1
]}

GUIVARCH, A ^{[1
]}

BALLINI, Y ^{[1
]}

DUREL, V ^{[1
]}

DANTERROCHES, C ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1992年 / 3卷 / 04期

关键词：

D O I：

10.1051/mmm:0199200304029900

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Two GaAs(200 nm)/Sc0.2Yb0.8As(2 nm)/GaAs heterostructures have been grown by molecular beam epitaxy, the first one onto a (001) nominal surface, and the second one onto a (001) vicinal surface (4-degrees off towards (111)Ga, tilt axis [-110]). The structures have been characterized by reflection high energy electron diffraction, Rutherford backscattering analysis and transmission electron microscopy. The Sc0.2Yb0.8As layer is matched to GaAs and grows in a two-dimensional mode, leading to a high crystalline quality. But the GaAs overlayer contains a high density of planar defects, due to its three-dimensional growth. For the two structures, the nature of the faults, their density, and their distribution are compared. The quality of the GaAs overlayer is improved through growth on a vicinal surface. This conclusion is discussed with respect to the particular growth conditions and resulting morphology of the epilayers.

引用

页码：299 / 312

页数：14

共 28 条

[1] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].