A 1K-GATE GAAS GATE ARRAY

被引：5

作者：

IKAWA, Y

TOYODA, N

MOCHIZUKI, M

TERADA, T

KANAZAWA, K

HIROSE, M

MIZOGUCHI, T

HOJO, A

机构：

[1] Toshiba Research & Development, Cent, Kawasaki, Jpn, Toshiba Research & Development Cent, Kawasaki, Jpn

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 05期

关键词：

D O I：

10.1109/JSSC.1984.1052214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LOGIC DEVICES

引用

页码：721 / 728

页数：8

共 12 条

[1]

INO M, 1982, NOV P GAAS IC S, P2

[2]

KINELL D, 1982, NOV GAAS IC S, P17

[3] ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

LEE, CP ;

ZUCCA, R ;

WELCH, BM .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :311-313

[4]

LEE FS, 1980, NOV P GAAS IC S

[5]

NAKAYAMA Y, 1983, FEB ISSCC, P48

[6]

TOYODA N, 1981, P INT S GAAS REL COM, P521

[7]

TOYODA N, 1982, 14TH INT C SOL STAT, P187

[8] HIGH-SPEED INTEGRATED LOGIC WITH GAAS MESFETS [J].

VANTUYL, RL ;

LIECHTI, CA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :269-276

[9]

VU T, 1983, MAY P CUST INT CIRC, P32

[10]

YOKOYAMA N, 1983, FEB ISSCC, P44

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