ACCEPTORLIKE ELECTRON TRAPS AND THERMALLY REVERSIBLE BARRIER HEIGHTS FOR AL ON UHV-CLEAVED (110) INP

被引:12
作者
SLOWIK, JH
RICHTER, HW
BRILLSON, LJ
机构
关键词
D O I
10.1063/1.335820
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3154 / 3161
页数:8
相关论文
共 41 条
[1]  
[Anonymous], 1971, SEMICONDUCT SEMIMET
[2]   COUPLED INTERFACE PLASMONS OF AL FILMS ON CDSE AND CDS [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1977, 38 (05) :245-248
[3]   CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786
[4]   ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].
BRILLSON, LJ ;
BRUCKER, CF ;
STOFFEL, NG ;
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841
[5]   FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
DANIELS, R ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569
[6]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[8]   PHYSICAL SIGNIFICANCE OF TO ANOMALIES IN SCHOTTKY BARRIERS [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :171-175
[9]   SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS [J].
CROWELL, CR ;
ROBERTS, GI .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3726-&
[10]   SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS [J].
CROWELL, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :951-957