THEORETICAL-STUDIES OF METAL DISILICIDE SILICON INTERFACES

被引：14

作者：

XU, YN

ZHANG, KM

XIE, XD

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8602

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8602 / 8606

页数：5

共 9 条

[1] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[2]

FRANCIOSI A, 1984, 17TH P INT C PHYS SE

[3] UNIVERSAL LINEAR-COMBINATION-OF-ATOMIC-ORBITALS PARAMETERS FOR D-STATE SOLIDS [J].

HARRISON, WA ;

FROYEN, S .

PHYSICAL REVIEW B, 1980, 21 (08) :3214-3221

[4]

HO PS, 1985, J VAC SCI TECHNOL B, V3, P1151

[5] SIMPLIFIED LCAO METHOD FOR THE PERIODIC POTENTIAL PROBLEM [J].

SLATER, JC ;

KOSTER, GF .

PHYSICAL REVIEW, 1954, 94 (06) :1498-1524

[6] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES [J].

TUNG, RT .

PHYSICAL REVIEW LETTERS, 1984, 52 (06) :461-464

[7] BONDING IN METAL DISILICIDES CASI2 THROUGH NISI2 - EXPERIMENT AND THEORY [J].

WEAVER, JH ;

FRANCIOSI, A ;

MORUZZI, VL .

PHYSICAL REVIEW B, 1984, 29 (06) :3293-3302

[8]

Xu Jian-Hua, 1984, Acta Physica Sinica, V33, P1480

[9]

Xu Y., UNPUB

← 1 →