GRAZING-INCIDENCE X-RAY CHARACTERIZATION OF AMORPHOUS SIOXNYHZ THIN-FILMS

被引：2

作者：

BRUNEL, M ^{[1
]}

ORTEGA, L ^{[1
]}

CROS, Y ^{[1
]}

VISCAINO, S ^{[1
]}

机构：

[1] LAB ETUD PROPRIETES ELECTRON SOLIDES,CNRS,F-38042 GRENOBLE 09,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90673-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A series of plasma-enhanced chemical vapor deposited silicon oxynitride films (SiOxNyHz) with O/(O + N) varying between 0 and 1 were studied by grazing-incidence X-ray techniques (X-ray reflectometry and GIXRD). Furthermore, Si K-edge XANES were measured on these materials and on several related crystalline systems, The influence of different chemical environments on the absorption edge is demonstrated.

引用

页码：289 / 292

页数：4

共 11 条

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