LIGHT FROM POROUS SILICON BY MULTIPHOTON VIBRONIC EXCITATION

被引:19
作者
DIENER, J
BENCHORIN, M
KOVALEV, DI
GANICHEV, SD
KOCH, F
机构
[1] Technische Universität München, Physik-Department E16
关键词
D O I
10.1103/PhysRevB.52.R8617
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O absorption band using a pulsed CO2 laser. Narrow resonances in the efficiency of light generation are discovered at 1030 and 1084 cm(-1). Time-resolved experiments on the luminescence and the ir-induced changes in optical transparency show that the two excitation modes are characterized by different temporal responses. Additionally, their spectral distributions differ substantially. For excitation at 1030 cm(-1) the familiar photoluminescence band of porous Si appears. We suggest microscopic processes responsible for the light emissions.
引用
收藏
页码:R8617 / R8620
页数:4
相关论文
共 11 条
  • [1] IR MULTIPHOTON PHOTOCHEMISTRY OF METHANOL/HANO
    BIALKOWSKI, SE
    GUILLORY, WA
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1977, 67 (05) : 2061 - 2067
  • [2] SURFACE INFRARED-SPECTROSCOPY
    CHABAL, YJ
    [J]. SURFACE SCIENCE REPORTS, 1988, 8 (5-7) : 211 - 357
  • [3] COUPLING OF AN ADSORBATE VIBRATION TO A SUBSTRATE SURFACE PHONON - H ON SI(111)
    DUMAS, P
    CHABAL, YJ
    HIGASHI, GS
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (09) : 1124 - 1127
  • [4] LIFETIME OF AN ADSORBATE-SUBSTRATE VIBRATION - H ON SI(111)
    GUYOTSIONNEST, P
    DUMAS, P
    CHABAL, YJ
    HIGASHI, GS
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (18) : 2156 - 2159
  • [5] DISSOCIATION AND BREAKDOWN OF MOLECULAR GASES BY PULSED CO2 LASER RADIATION
    ISENOR, NR
    RICHARDSON, MC
    [J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 224 - +
  • [6] KOVALEV D, UNPUB
  • [7] PHOTOLUMINESCENCE SPECTRA FROM POROUS SILICON (111) MICROSTRUCTURES - TEMPERATURE AND MAGNETIC-FIELD EFFECTS
    PERRY, CH
    FENG, L
    NAMAVAR, F
    KALKHORAN, NM
    SOREF, RA
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (25) : 3117 - 3119
  • [8] RESONANT RAMAN-SCATTERING IN SILICON
    RENUCCI, JB
    TYTE, RN
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3885 - 3895
  • [9] SHEN YR, 1984, PRINCIPLES NONLINEAR, P437
  • [10] MECHANISMS OF VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON
    VIAL, JC
    BSIESY, A
    GASPARD, F
    HERINO, R
    LIGEON, M
    MULLER, F
    ROMESTAIN, R
    MACFARLANE, RM
    [J]. PHYSICAL REVIEW B, 1992, 45 (24): : 14171 - 14176