OPTICAL ANISOTROPY OF VACANCY-ORDERED GA2SE3 GROWN BY MOLECULAR-BEAM EPITAXY

被引：42

作者：

OKAMOTO, T

KOJIMA, N

YAMADA, A

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN

[2] TOKYO INST TECHNOL,DEPT MET ENGN,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2B期

关键词：

GA2SE3; III-VI COMPOUND; DEFECT ZINCBLENDE STRUCTURE; VACANCY ORDERING; ORDERED STRUCTURE;

D O I：

10.1143/JJAP.31.L143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical anisotropy of the vacancy-ordered Ga2Se3 grown on (100)GaP has been investigated. The electron-diffraction studies revealed that the vacancy-ordered superstructure was predominantly formed in the [01 1] direction when the film was grown with a VI/III ratio of 150. From the transmission spectra for light polarized toward [011] and [011BAR], it is found that a difference in the absorption coefficients of the two polarized lights is more than 10(4) cm-1 at a wavelength of around 525 nm, and that the vacancy-ordered Ga2Se3 behaves like a polarizer in the selected wavelength range.

引用

页码：L143 / L144

页数：2

共 5 条

[1] POLARIZED BAND-EDGE PHOTOLUMINESCENCE AND ORDERING IN GA0.52IN0.48P [J].