VACANCY ORDERING OF GA2SE3 FILMS BY MOLECULAR-BEAM EPITAXY

被引：41

作者：

TERAGUCHI, N ^{[1
]}

KATO, F ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

NAKAMURA, Y ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga2Se3 films have been grown by molecular beam epitaxy. Single-crystal Ga2Se3 films were obtained for the first time on (001) GaP substrates at a substrate temperature of 550-degrees-C and at a VI/III flux ratio greater than 15. Extra diffraction spots with weak intensity were observed in reflection high-energy electron diffraction patterns of the Ga2Se3 films grown at a VI/III ratio above 150. These extra spots were also observed in the transmission electron diffraction pattern. The extra points are attributed to the ordering of native Ga vacancies in the defect zinc blende structure.

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页码：567 / 569

页数：3

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