MOLYBDENUM-SILICON SCHOTTKY BARRIER

被引:20
作者
KANO, G
INOUE, M
MATSUNO, JI
TAKAYANAGI, S
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D O I
10.1063/1.1703151
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O59 [应用物理学];
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页码:2985 / +
页数:1
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共 15 条
[1]  
CHILDS WJ, 1951, T ASM, V43, P106
[2]  
CROWELL CR, 1965, T METALL SOC AIME, V233, P478
[3]   ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].
CROWELL, CR ;
HOWARTH, LE ;
SPITZER, WG ;
LABATE, EE .
PHYSICAL REVIEW, 1962, 127 (06) :2006-&
[4]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[6]  
GROWELL CR, 1965, J APPL PHYS, V36, P3843
[7]  
HERMANN G, 1951, OXIDECOATED CATHODE, V2, P100
[8]  
HODGMAN CD, 1963, HANDBOOK CHEMISTRY P, P2655
[9]  
INOUE M, UNPUBLISHED
[10]   GOLD-EPITAXIAL SILICON HIGH-FREQUENCY DIODES [J].
KAHNG, D ;
DASARO, LA .
BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1) :225-+