THE PHASES OF THE RESISTIVITY AND THERMOPOWER OSCILLATIONS IN GAAS-GA1-XALXAS HETEROJUNCTIONS

被引：6

作者：

DIORIO, M ^{[1
]}

STONER, R ^{[1
]}

FLETCHER, R ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT PHYS,KINGSTON K7L 3N6,ONTARIO,CANADA

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING GALLIUM COMPOUNDS - THERMOELECTRICITY - Oscillations;

D O I：

10.1016/0038-1098(88)90367-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have examined the absolute and relative phases of the oscillations (at low magnetic fields) in the resistivity and thermopower of three GaAs-Ga//1// minus //xAl//xAs heterojunctions. The experimental value for the absolute phase of the resistivity oscillations agrees with the predicted result. We see virtually no phase difference between the resistivity and thermoelectric oscillations contrary to theoretical predictions based on the assumption that the thermopower is due to diffusion effects. This null result reinforces the view that the thermopower is mainly due to phonon drag rather than diffusion effects.

引用

页码：697 / 700

页数：4

共 17 条

[11] THERMOMAGNETIC BEHAVIOR OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].