FABRICATION AND AFM CHARACTERIZATION OF A COPLANAR TUNNEL JUNCTION WITH A LESS-THAN 30 NM INTERELECTRODE GAP

被引：11

作者：

ITOUA, S ^{[1
]}

JOACHIM, C ^{[1
]}

ROUSSET, B ^{[1
]}

FABRE, N ^{[1
]}

机构：

[1] LAB AUTOMAT & ANALYSE SYST,F-31077 TOULOUSE,FRANCE

来源：

NANOTECHNOLOGY | 1994年 / 5卷 / 01期

关键词：

D O I：

10.1088/0957-4484/5/1/002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The results of a nanolithography process for making co-planar tunnel junctions with a gap length lower than 30 nm and electrode width in the 100 nm range are presented. These electrodes are buried in the SiO2 substrate which makes the SiO2 gap surface accessible for atomic force microscopy characterization.

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页码：19 / 25

页数：7

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