MULTIPLE-WAVELENGTH VERTICAL-CAVITY LASER ARRAYS ON PATTERNED SUBSTRATES

被引：14

作者：

ENG, LE ^{[1
]}

BACHER, K ^{[1
]}

YUEN, WP ^{[1
]}

HARRIS, JS ^{[1
]}

CHANGHASNAIN, CJ ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 02期

关键词：

D O I：

10.1109/2944.401250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a spatially chirped resonant wavelength in vertical cavities and vertical cavity surface emitting lasers (VCSEL's) grown by Molecular Beam Epitaxy. The wavelength shift is achieved by varying the GaAs growth rate across the wafer using a patterned backing substrate to induce a lateral temperature profile. Temperature patterns transfer to thickness patterns with a resolution on the millimeter scale. We demonstrate 8-nm periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical cavities, and a 20-nm shift in lasing wavelength in a VCSEL array.

引用

页码：624 / 628

页数：5

共 16 条

[1] MOLECULAR-BEAM EPITAXY GROWTH OF VERTICAL CAVITY OPTICAL-DEVICES WITH INSITU CORRECTIONS [J].