DEPOSITION OF SIO2-FILMS ON STRAINED SIGE LAYER BY DIRECT PHOTO CHEMICAL-VAPOR-DEPOSITION

被引：7

作者：

LIN, CT ^{[1
]}

CHANG, SJ ^{[1
]}

NAYAK, DK ^{[1
]}

SHIRAKI, Y ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 01期

关键词：

SIGE; PHOTO-CVD; AUGER PROFILE; DIELECTRIC STRENGTH; LEAKAGE CURRENT;

D O I：

10.1143/JJAP.34.72

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality SiO2 layers were deposited on strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that neither was Ge rejected nor was a Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 x 10(-9) A/cm(2) under a 2 x 10(6) V/cm electric field. The breakdown held can reach over 16 MV/cm for these SiGe metal-oxide-semiconductor (MOS) diodes.

引用

页码：72 / 74

页数：3

共 7 条

[1] ETCHING CHARACTERISTICS OF SI1-XGEX ALLOY IN AMMONIAC WET CLEANING [J].