A THERMODYNAMICAL MODEL OF MOLECULAR-BEAM EPITAXY, APPLICATION TO THE GROWTH OF II VI SEMICONDUCTORS

被引：21

作者：

GAILLIARD, JP

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 06期

关键词：

D O I：

10.1051/rphysap:01987002206045700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 463

页数：7

共 24 条

[1] VELOCITY DISTRIBUTIONS OF AS2 AND AS4 SCATTERED FROM GAAS [J].

ARTHUR, JR ;

BROWN, TR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :200-203

[2]

ARTHUR JR, 1984, 5TH P MOL BEAM EP WO

[3]

BABA S, 1978, APPL PHYS LETT, V49, P3682

[4]

Brebrick R.F., 1983, SEMICONDUCTORS SEMIM, V19

[5]

CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[6] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].

CHO, AY .

THIN SOLID FILMS, 1983, 100 (04) :291-317

[7]

CHO AY, 1975, PROGR SOLID STATE CH, V10

[8] CHARACTERIZATION OF CDXHG1-XTE P-TYPE LAYERS GROWN BY MBE [J].

FAURIE, JP ;

MILLION, A ;

PIAGUET, J .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :10-14

[9] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A ;

BOCH, R ;

TISSOT, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1593-1597

[10] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDXHG1-XTE [J].

FAURIE, JP ;

MILLION, A .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :582-585

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