ON THE PRACTICAL APPLICATIONS OF MBE SURFACE PHASE-DIAGRAMS

被引:105
作者
NEWSTEAD, SM
KUBIAK, RAA
PARKER, EHC
机构
[1] VG SEMICON LTD,E GRINSTEAD RH19 1XZ,SUSSEX,ENGLAND
[2] UNIV WARWICK,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND
[3] CITY LONDON POLYTECH,DEPT PHYS,LONDON EC3N 2EY,ENGLAND
关键词
SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING INDIUM COMPOUNDS;
D O I
10.1016/0022-0248(87)90363-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper reports surface phase diagrams for (100) GaAs and (100) InAs. In GaAs, growth rates from 0. 07 to 3. 0 mu m/h, As//4:Ga flux ratios from 0. 25:1 to 100:1 and growth temperatures from 300 degree C to 800 degree C were used, covering the whole range of growth conditions of practical use in MBE. Results on the nucleation of the (100) InAs/GaAs heterojunctions are also presented. The correlation between material properties, surface reconstruction and growth conditions is discussed for both GaAs and homo- and heteroepitaxial InAs. The emphasis is on the practical application of the results as an aid to optimizing (and reproducing) MBe growth conditions with reasonable efficiency.
引用
收藏
页码:49 / 54
页数:6
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