ON THE PRACTICAL APPLICATIONS OF MBE SURFACE PHASE-DIAGRAMS

被引：105

作者：

NEWSTEAD, SM

KUBIAK, RAA

PARKER, EHC

机构：

[1] VG SEMICON LTD,E GRINSTEAD RH19 1XZ,SUSSEX,ENGLAND

[2] UNIV WARWICK,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[3] CITY LONDON POLYTECH,DEPT PHYS,LONDON EC3N 2EY,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1016/0022-0248(87)90363-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports surface phase diagrams for (100) GaAs and (100) InAs. In GaAs, growth rates from 0. 07 to 3. 0 mu m/h, As//4:Ga flux ratios from 0. 25:1 to 100:1 and growth temperatures from 300 degree C to 800 degree C were used, covering the whole range of growth conditions of practical use in MBE. Results on the nucleation of the (100) InAs/GaAs heterojunctions are also presented. The correlation between material properties, surface reconstruction and growth conditions is discussed for both GaAs and homo- and heteroepitaxial InAs. The emphasis is on the practical application of the results as an aid to optimizing (and reproducing) MBe growth conditions with reasonable efficiency.

引用

页码：49 / 54

页数：6