EFFECTS OF BAND NON-PARABOLICITY ON ELECTRON DRIFT VELOCITY IN SILICON ABOVE ROOM-TEMPERATURE

被引:39
作者
JACOBONI, C [1 ]
MINDER, R [1 ]
MAJNI, G [1 ]
机构
[1] UNIV MODENA,IST FIS,MODENA,ITALY
关键词
D O I
10.1016/0022-3697(75)90055-4
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1129 / 1133
页数:5
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