USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE PERFORMANCE OF CDTE DETECTORS

被引：32

作者：

ZANIO, K ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1051/rphysap:01977001202034300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：343 / 347

页数：5

共 13 条

[1] ALEKSEENKO MV, 1974, FIZ TEKH POLUPROV, V8, P550
[2] ALEKSEENKO MV, SOV PHYS SEMICOND, V8, P351
[3] CHARACTERIZATION OF TRANSPORT PROPERTIES OF HALOGEN-DOPED CDTE USED FOR GAMMA-RAY DETECTORS
BELL, RO
WALD, FV
CANALI, C
NAVA, F
OTTAVIAN.G
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 331 - 341
[4] DABROWSKI AJ, 1976, IEEE T NUCL SCI, V23, P171, DOI 10.1109/TNS.1976.4328232
[5] DABROWSKI AJ, 1976, P INT S CADMIUM TELL
[6] HEAT SHIELD ABLATION SENSOR UTILIZING CDTE GAMMA DETECTORS
DROMS, CR
LANGDON, WR
ROBISON, AG
ENTINE, G
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) : 498 - 500
[7] GAMMA-RAY SPECTROSCOPY WITH SINGLE-CARRIER COLLECTION IN HIGH-RESISTIVITY SEMICONDUCTORS
MALM, HL
CANALI, C
MAYER, JW
NICOLET, MA
ZANIO, KR
AKUTAGAWA, W
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (06) : 344 - 346
[8] MAYER JW, SEMICONDUCTOR DETECT, P455
[9] CHARGE CARRIER TRANSPORT PROPERTIES OF SEMICONDUCTOR-MATERIALS SUITABLE FOR NUCLEAR RADIATION DETECTORS
OTTAVIANI, G
CANALI, C
ALBERIGIQUARANTA, A
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) : 192 - 204
[10] POLARIZATION IN CADMIUM TELLURIDE NUCLEAR RADIATION DETECTORS
SIFFERT, P
BERGER, J
SCHARAGER, C
CORNET, A
STUCK, R
BELL, RO
SERREZE, HB
WALD, FV
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) : 159 - 170