COPPER THIN-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION FROM COPPER DIPIVALYLMETHANATE

被引：19

作者：

MARUYAMA, T

IKUTA, Y

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Kyoto

来源：

JOURNAL OF MATERIALS SCIENCE | 1993年 / 28卷 / 20期

关键词：

D O I：

10.1007/BF00367827

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was copper dipivalylmethanate which is volatile and thermally stable. At a reaction temperature above 220-degrees-C, polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity of the film was in the range 1.7-2.7 mu OMEGA cm.

引用

页码：5540 / 5542

页数：3

共 8 条

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[2]

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[3]

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[4]

PAWLYK C, 1955, Patent No. 2704728