FORMATION OF NEGATIVE-U CENTERS IN IONIC-CRYSTALS

被引：13

作者：

WEISER, K ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.25.1408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1408 / 1410

页数：3

共 13 条

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[3]

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[5]

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[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[7]

Lidiard A B, 1957, HDB PHYSIK, VXX, P246

[8] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

MOTT, NF ;

DAVIS, EA ;

STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996

[9]

SEITZ F, 1940, MODER THEORY SOLIDS, P441

[10] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

STREET, RA ;

MOTT, NF .

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