EXTREMELY LOW-RESISTANCE NONALLOYED OHMIC CONTACTS ON MOLECULAR-BEAM EPITAXIALLY GROWN P-TYPE GE

被引：3

作者：

UNLU, MS ^{[1
]}

STRITE, S ^{[1
]}

ADOMI, K ^{[1
]}

GAO, GB ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 02期

关键词：

GaAs; Semiconductor devices and materials; Semiconductor growth; Semiconductors;

D O I：

10.1049/el:19900060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extremely low-resistance nonalloyed ohmic contacts have been formed on p-type Ge grown on GaAs by molecular beam epitaxy as part of a research effort into GaAs/Ge heterojunction devices. Using evaporated Ti/Al metallisation, specific contact resistances well below 1 x 10-8Ωcm2 were achieved for heavily doped Ge (p > 1 x 1019cm-3). The investigated Ge layers were grown as the base region of AlGaAs/Ge/GaAs HBTs. The influence of the low base resistance on the high-frequency performance of HBTs was studied by simulations. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：89 / 91

页数：3