HETEROJUNCTIONS - DEFINITE BREAKDOWN OF THE ELECTRON-AFFINITY RULE

被引：25

作者：

NILES, DW ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2923

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2923 / 2925

页数：3

共 32 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] THE EFFECT OF MANY-ELECTRON CORRELATION ON PHOTOTHRESHOLDS OF SEMICONDUCTORS AND VALENCE BAND DISCONTINUITIES AT HETEROJUNCTIONS [J].

BECHSTEDT, F ;

ENDERLEIN, R ;

HEINRICH, O .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 126 (02) :575-585

[3] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[4] EFFECT OF SPIN-ORBIT INTERACTION ON HETEROJUNCTION BAND DISCONTINUITIES [J].

CHEN, ZH ;

MARGALIT, S ;

YARIV, A ;

CHIU, LC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2970-2972

[5]

COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1

[6] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[7]

FREEOUF JL, UNPUB SURF SCI

[8] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].

FRENSLEY, WR ;

KROEMER, H .

PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652

[9] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[10] THEORY OF BAND LINE-UPS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1231-1238

← 1 2 3 4 →