STACKING-FAULT ASYMMETRY IN EPITAXIAL-FILMS OF MOCVD ZNSE/GAAS(001)

被引：14

作者：

BATSTONE, JL

STEEDS, JW

WRIGHT, PJ

机构：

[1] UNIV BRISTOL,HH WILLS PHYS LAB,BRISTOL BS8 1TL,AVON,ENGLAND

[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1992年 / 66卷 / 04期

关键词：

D O I：

10.1080/01418619208201579

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial films of ZnSe/GaAs(001) contain high densities of stacking faults (almost-equal-to 10(10) cm-2) which show a marked asymmetry in density parallel to orthogonal [110] and [110BAR] directions. Addition of dopants such as Al and In during film growth affects the defect distribution resulting in both a systematic reduction in stacking fault density with increasing dopant concentration and the formation of misfit dislocations. It is postulated that the observed stacking fault asymmetry arises due to variations in partial dislocation mobilities due to the addition of dopants.

引用

页码：609 / 620

页数：12

共 28 条

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