FOURIER-TRANSFORM PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MEDIUM-BANDGAP HG1-XCDXTE AND INSB

被引：13

作者：

FUCHS, F

KHENG, K

SCHWARZ, K

KOIDL, P

机构：

[1] Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1S/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time on Fourier transform photoluminescence excitation spectroscopy in the mid-infrared covering the wavelength range between 1 and 5.5 mum. By studying a medium-bandgap Hg0.66Cd0.34Te bulk crystal and InSb bulk material, direct evidence for the excitonic nature of the luminescence transitions has been found in both cases. In addition, the excitation spectra on MBE-grown Hg1-xCdxTe superlattices show the step-like density of states of the confined two-dimensional system.

引用

页码：S75 / S80

页数：6

共 28 条

[1] INTRINSIC ABSORPTION-SPECTROSCOPY AND RELATED PHYSICAL QUANTITIES OF NARROW-GAP SEMICONDUCTORS HG1-XCDXTE [J].