LOW RESISTANCE ALLOYED OHMIC CONTACTS TO AL0.48IN0.52AS/N+-GA0.47IN0.53AS

被引：8

作者：

CAPANI, PM ^{[1
]}

MUKHERJEE, SD ^{[1
]}

ZWICKNAGL, P ^{[1
]}

BERRY, JD ^{[1
]}

GRIEM, HT ^{[1
]}

RATHBUN, L ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV, NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 11期

关键词：

D O I：

10.1049/el:19840310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：446 / 447

页数：2

共 7 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1981, 2 (01) :7-9

[3] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

BRASLAU, N ;

GUNN, JB ;

STAPLES, JL .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+

[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[5]

MUKHERJEE SD, 1984, FEB WOCSEMMAD SAN FR

[6]

OLIVER JD, 1979, 21ST EL MAT C COL

[7] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J].

REEVES, GK ;

HARRISON, HB .

ELECTRON DEVICE LETTERS, 1982, 3 (05) :111-113

← 1 →