LATTICE SITE LOCATION AND OUTDIFFUSION OF MERCURY IMPLANTED IN GAAS

The formation of p+ layers in GaAs by mercury ion implantation has been demonstrated and abrupt electrical profiles with hole concentrations of the order of 9 X 10(18) cm-3 have been measured after annealing at 900-degrees-C for 3 s. In the present work evidence is shown for the lattice site location and outdiffusion of the mercury ions using the Rutherford backscattering spectrometry (RBS) technique. During the rapid thermal annealing most of the mercury ions concentrate near the surface region and occupy the gallium site in the crystal lattice. These results are compared with results of the internal monitoring of the surrounding of the Hg-197m ion using the electron-gamma perturbed angular correlation (PAC) technique.