MICROSCOPIC THEORY OF SUPERCONDUCTING CONTACTS WITH INSULATING BARRIERS

被引:51
作者
VOLKOV, AF [1 ]
KLAPWIJK, TM [1 ]
机构
[1] UNIV GRONINGEN,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS
关键词
D O I
10.1016/0375-9601(92)90578-A
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We analyze contacts like SININ and SINIS with dielectric barriers I. On the basis of a microscopic theory, we obtain the matching conditions at the SIN boundary for the distribution functions. The I(V) characteristics are found for the SININ contacts with a length exceeding the correlation length-xi. It is shown that in contacts with a high transmittance of the SIN interface an excess current I(exc) > 0 appears at high voltages. In contacts with a low transmittance a deficit current I(def) < 0 at high V and a peak in the conductance at low V exist. Both I(exc) and I(def) diminish with increasing the contact length d. The zero-bias anomaly is suppressed by temperature and a weak magnetic field.
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收藏
页码:217 / 224
页数:8
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